Talks 1-20 21-40 41-60 61-80 81-100 101-126

  1. M.Anderle, D.Bassi, S.Iannotta, S.Marchetti and G.Scoles, “Spin flip experiments with hydrogen beams”; 7th Intern. Symposium on Molecular Beams, Riva del Garda (I), May 29-June 2, 1979.
  1. M.Anderle, D.Bassi, S.Iannotta, and G.Scoles, “Spin polarized atomic hydrogen diffraction experiments from alkali halides surfaces”; 7th Intern. Symposium on Molecular Beams, Freiburg (D), June 13-17, 1983. 
  1. M.Anderle and C.M.Loxton, "On the broadening of SIMS measured interface by ion beam mixing"; 7th Intern. Conf. Ion Beam Analysis IBA '85, Berlin (FRG), July 7-12, 1985.  
  1. G.Queirolo, P.Caprara, G.Ottaviani, M.Anderle and D.Bassi; "Current effects in BF2 implants in silicon"; Symp. on Atomic and Surface Physics SASP '86. Obertraun (A), February 9 -15, 1986 and Intern. Conf. Ion Beam Modification Materials IBMM '86, Catania (I), 9 -13 June 1986.
  1. M.Anderle, R.Canteri e D.Bassi; "Application of Secondary Ion Mass Spectrometry (SIMS) to semiconductor characterization"; 1° National Congress of the Matter Structure; Genova (I), 24-27 June 1986. 
  1. M. Anderle, D.Bassi and R.Canteri; "Si/SiO2 Interface profiling by SIMS: the dependence on the film doping procedure"; 4th Intern. Conf. Quantitative Surface Analysis QSA-4. Teddington (UK), November 18-20 1986.
  1. M.Anderle, R.Canteri, P.Caprara and G. Queirolo; "Quantitative SIMS analysis of BF2 implanted and diffused layers: Comparison with carrier profiles"; SIMS VI Int. Conf.. Versailles (F), September 13-17, 1987. 
  1. M.Anderle, R.Canteri, P.Cagnoni, A.Sandrinelli and S.Pizzini; "Detection of oxygen, carbon and deep level impurities segregation at grain boundaries in polycrystalline silicon”; SIMS VI Int. Conf.. Versailles (F), September 13-17, 1987.
  1. M.Anderle, R.Canteri, G.Queirolo, D.Robba; "Quantitative SIMS analysis of BF2 implanted silicon"; X National Congress on Vacuum Science and Technology, Stresa (I), October 12-17, 1987.
  1. R.Canteri and M.Anderle; "Study of grain boundary segregation by SIMS"; Cameca European Users Meeting, Luxembourg, March 28-29, 1988
  1. M.Anderle and R.Canteri; "Quantitative SIMS analysis on molecular ion implanted silicon"; FICH-6 Workshop, Structural and Microanalytical Characterization of Advanced Materials.; Turin (I), April 13-14, 1988.
  1. R.Canteri, L.Moro, G.Queirolo and M.Anderle; "Matrix effects and quantitative analysis in SIMS/SNMS depth profiling implanted silicon"; 5th Intern. Conference on Quantitative Surface Analysis (QSA-5) London, 15-18 november 1988.
  1. L.Moro, M.Bianchi e M.Anderle; "Chemical characterization of thin films employed in silicon technology by Sputtered Neutral Mass Spectrometry (SNMS)"; Padova SIMS '88, Padova (I), 1-2 December 1988
  1. R.Canteri, M.Fedrizzi e M.Anderle; "Mixing, chemical effects and quantitative analyses in SIMS depth profiling semiconductor materials"; Padova SIMS '88. , Padova (I), 1-2 December 1988. 
  1. L.Moro, P.Lazzeri, G.Ottaviani, P.Serra and M.Anderle; "SNMS and RBS/NRA characterizations of doped oxides for microelectronic applications"; SIMS VII Int. Conf.. Monterey (CA), September 3-8, 1989
  1. R. Canteri, R.Angelucci and M.Anderle; "SIMS depth profiling of implanted silicide/silicon layers"; SIMS VII Int. Conf.. Monterey (CA), September 3-8, 1989.
  1. S.W.MacLaren, J.E.Baker, L.J.Guido, N.Holonyak, M.Anderle and C.M.Loxton; "Instrumental and sample effects on depth resolution when sputtering Si/SiO2 and compound semiconductors using SIMS and SNMS"; SIMS VII Int. Conf.. Monterey (CA), September 3-8, 1989
  1. R.Canteri, L.Moro and M.Anderle; "SIMS and SNMS depth profiling of implanted silicon: matrix effects and quantitative analysis"; SIMS VII Int. Conf.. Monterey (CA), September 3-8, 1989.
  1. M.Anderle; "Applications of SNMS in VLSI technology: studies of dopant redistribution in heterogeneous layers"; PITSA Int. Workshop on Postionization Techniques in Surface Analysis. Kaiserslautern (FRG), October 1-3, 198

  2. P.Lazzeri, L.Moro and M.Anderle; "Study of the influence of a LN2 cooling system in SNMS analyses"; 2nd European Vacuum Conference. Trieste (I), 21-26 May 1990.