Mariano Anderle publications on journals with international referee board



Papers 1-20 21-40 41-60 61-80 81-100 101-120 121-140


  1. “Boron ultra low energy SIMS depth profiling improved by rotating stage”, M. Bersani, D. Giubertoni, E. Iacob, M. Barozzi, S. Pederzoli, L. Vanzetti and M. Anderle, Appl. Surf. Sci. 252, 7315 (2006).


  1. “An electron spectroscopy study of a-C:H under thermal annealing”, L.Calliari, M. Filippi, G. Gottardi, N. Laidani, and M. Anderle, Surf. Interf, Analysis 38, 761 (2006).


  1. “Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic”, M.Barozzi, D. Giubertoni, S. Pederzoli, M. Anderle, E. Iacob and M. Bersani, Appl. Surf. Sci. 252, 7286 (2006).


  1. “Production and characterization of thin a-C:(H) films for gas permeation barrier functionality against He, CO2,N2, O2 and H2O.”, N. Laidani, R. Bartali, G. Gottardi, M. Anderle, G. Chuste and C. Bellachioma, Journal of Phys. Cond. Matter 18, 5945 (2006).


  1. “ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas”, P. Lazzeri, X. Hua, G. Oehrlein, E. Iacob, M. Barozzi, M. Bersani and M. Anderle, Appl. Surf. Sci. 252, 7186 (2006).


  1. “The role of hydrogen in the electronic structure of amorphous carbon: An electron spectroscopy study”, L.Calliari, M. Filippi, N. Laidani, G. Gottardi, R. Bartali, V. Micheli and M. Anderle, Topics in Appl. Phys. 100, 447 (2006).


  1. “Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials”, X. Hua, S. Engelmann, G.S. Oehrlein, P. Jiang, P. Lazzeri, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B24, 1850 (2006).


  1. “State of Art in the SIMS (Secondary Ion Mass Spectrometry) Application to Archaeometry Studies”, M. Anderle, M. Bersani, L. Vanzetti and S. Pederzoli, Macromol. Symp.238, 11 (2006).


  1. “Damage of ultralow k materials during photoresist mask stripping process”, X. Hua, M-shu Kuo, G.S. Oehrlein, P. Lazzeri, E. Iacob, M. Anderle, C.K. Inoki, T.S. Kuan, P. Jiang, and W-li Wu , J. Vac. Sci. Technol. B24, 1238 (2006).


  1. “Real time observation and optimization of tungsten atomic layer deposition process cycle”, W. Lei, L. Henn-Lecordier, M. Anderle, G.W. Rubloff, M. Barozzi, and M. Bersani, J. Vac. Sci. Technol. B24, 780 (2006).


  1. “Local Arsenic Structure in Shallow Implants in Si following SPER: an EXAFS and MEIS study”, G. Pepponi, D. Giubertoni, S. Gennaro, M. Bersani, M. Anderle, R. Grisenti, M. Werner, J. A. Van Den Berg, AIP Proc. 866, IIT2006 - Marseille, 117 (2006).


  1. “The electronic structure of carbon films deposited in rf argon-hydrogen plasma” , L.Calliari, M. Filippi, N. Laidani and M.Anderle, J. of Elec. Spectr. and Rel. Phenomena 150, 40 (2006).


  1. “Interphase exchange coupling in Fe/Sm–Co bilayers with gradient Fe thickness”, M.-Hui Yu, J. Hattrick-Simpers, I. Takeuchi, J. Li, Z.L. Wang, J.P. Liu, S.E. Lofland, S. Tyagi, J.W. Freeland, D.Giubertoni, M. Bersani, and M. Anderle, J. Appl. Phys. 98, 63908 (2005).


  1. “Porosity-induced effects during C4F8/90% Ar plasma etching of silica-based ultralow-K dielectrics”, P. Lazzeri, G.S. Oehrlein, X. Hua, M. Barozzi, E. Iacob, and M. Anderle, J. Vac. Sci. Technol. B23, 1491 (2005).


  1. “An electron spectroscopy study of a-C:H films produced by PACVD in a CH4-CO2 gas mixture”, L. Calliari, M. Filippi ,G. Gottardi, N. Laidani, and M. Anderle, Surf.Sci. 586, 96 (2005).


  1. “Covalently anchored lipid structures on amine-enriched polystyrene”, L. Lunelli, L. Pasquardini, C. Pederzolli, L. Vanzetti, and M.Anderle, Langmuir 21, 8338 (2005).


  1. “Amorphous carbon thin films deposited on Si and PET: Study of interface states”, S.M. Mariazzi, C. Macchi, G.P. Karwasz, R.S. Brusa, N. Laidani, R. Bartali, G. Gottardi and M. Anderle, Acta Physica Polonica A107, 842 (2005).


  1. “Effects of plasma etch and stripping on ULK materials”, X. Hua, G. S. Oehrlein, P. Lazzeri, E. Iacob, M. Anderle, C. K. Inoki, T. S. Kuan, P. Jang, and W-Li Wu, Future Fab Intl 18, June 28, (2005).


  1. Amorphous carbon film growth on Si: Correlation between stress and generation of defects into the substrate”, R. S. Brusa, C. Macchi, S. Mariazzi, G. P. Karwasz, N. Laidani, R. Bartali, and M. Anderle
    Appl. Phys. Lett. 86, 221906 (2005).


  1. Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectrics”, P. Lazzeri, L. Vanzetti, M. Anderle, M. Bersani, J. J. Park, Z. Lin, R. M. Briber, G. W. Rubloff, H. C. Kim, and R. D. Miller, J. Vac. Sci. Technol. B 23, 908 (2005).