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    Mariano Anderle publications on journals with international referee board

     

     

    Papers 1-20 21-40 41-60 61-80 81-100 101-120 121-140

     

     

    1. "Nucleation and growth of silicon on SiO2 during SiH4 low pressure chemical vapor deposition as studied by hydrogen desorption titration", M.Liehr, S.S.Dana, and M.Anderle, J.Vac.Sci.Technol. A10, 869 (1992).

     

    1. "Sputtered neutral and molecular ion mass spectrometries in the characterization of multilayer samples", L.Moro, R.Canteri and M.Anderle, Surf. Interf. Anal. 18, 765 (1992).

     

    1. "Kinetics of nucleation and growth of Si on SiO2 in very low pressure SiH4 Chemical Vapor Deposition", S.S.Dana, M.Liehr, M.Anderle and G.W.Rubloff, Appl. Phys. Lett. 61, 3035 (1992).

     

    1. “Anomalous Diffusion of Fluorine in Silicon”, S.P.Jeng, T.P.Ma, R.Canteri, M.Anderle and G.W.Rubloff, Appl. Phys. Lett. 61, 1310 (1992).

     

    1. “Matrix Effects and Quantitative Analysis in Silicon: Effects in the Presence of Localized Reactive Species”, R.Canteri, L.Moro and M.Anderle, Secondary Ion Mass Spectrometry (SIMS VIII), Eds. A.Benninghoven, K.T.F.Janssen, J.Tümpner, and H.W.Werner, J.Wiley &Sons (Chichester 1992) p.135.

     

    1. “Hydrogen-related complexes as the Stressing Species in High-Fluence Hydrogen-Implanted, Single Crystal Silicon”, G.F.Cerofolini, L.Meda, R.Baldoni, F.Corni, S.Fabbroni, G.Ottaviani, R.Tonini, M.Anderle and R.Canteri, Phys. Rev. B46, 2061 (1992).

     

    1. “Depth Profiling of Multilayer Samples: A Comparison between SNMS and (MCs)+ SIMS”, L.Moro, R.Canteri and M.Anderle, Secondary Ion Mass Spectrometry (SIMS VIII), Eds. A.Benninghoven, K.T.F.Janssen, J.Tümpner, and H.W.Werner, J.Wiley &Sons (Chichester 1992) p.865.

     

    1. "Evidence for Molecular Hydrogen in Silicon", L.Meda, C.F.Cerofolini, G.Ottaviani, R.Tonini, F.Corni, R.Balboni, M.Anderle, R.Canteri, and R.Diercks, Physica B170, 259 (1991).

     

    1. "SNMS studies of ULSI gate interconnection structures", L.Moro, P.Lazzeri, G.Ottaviani, L.Bacci, G.Queirolo and M.Anderle, Fresenius J Anal Chem 341, 20 (1991).

     

    1. "Ambient gas induced SiC-like structures in edge-defined film-fed growth polycristalline silicon samples", B.Pivac, A.Borghesi, R.Canteri and M.Anderle, Journal of Materials Science 26, 2725 (1991).

     

    1. "Low temperature dopant activation of BF2 implanted silicon", G.Queirolo, C.Bresolin, D.Robba, M.Anderle, R.Canteri, A.Armigliato, G.Ottaviani and S.Frabboni, Journal of Electronic Materials 20, 373 (1991).

     

    1. "State and evolution of hydrogen implanted silicon", L.Meda, G.F.Cerofolini, C.Bresolin, R.Dierckx, D.Donelli, M.Orlandini, M.Anderle, R.Canteri, G.Ottaviani, R.Tonini, C.Claeys, J.Vanhellemont, S.Pizzini and S.Farina, Semiconductor Silicon 90, Eds.H.R.Huff, K.G.Barreclought and Jun-ichi Chikawa, The Electrochemical Society, Pennington NJ (1990), p.456.

     

    1. "A comparison between zero and seven degree of tilt implantation of As+, P+ and BF2+", C.Bresolin, C.Zaccherini, M.Anderle and R.Canteri, Nucl. Instrum. and Meth. in Physics Research B51, 122 (1990).

     

    1. "SIMS and SNMS depth profiling of implanted silicon: matrix effects and quantitative analysis", R.Canteri, L.Moro and M.Anderle, Secondary Ion Mass Spectrometry (SIMS VII), Eds. A.Benninghoven, C.A.Evans, K.D.McKeegan, H.A.Storms, and H.W.Werner, J.Wiley &Sons (Chichester 1990) p.135.

     

    1. "Applications of Secondary Neutral Mass Spectrometry (SNMS) in VLSI Technology", M.Anderle and L.Moro, Surf. Interf. Anal. 15, 525 (1990).

     

     

    1. "Ion beam mixing and sample effects on SIMS and SNMS depth resolution of SiO2/Si and compound semiconductors interfaces", S.W.MacLaren, J.E.Baker, L.J.Guido, N.Holonyak, M.Anderle and C.M.Loxton, Secondary Ion Mass Spectrometry (SIMS VII), Eds. A.Benninghoven, C.A.Evans, K.D.McKeegan, H.A.Storms, and H.W.Werner, J.Wiley &Sons (Chichester 1990) p.679.

     

    1. "Structure and evolution of the displacement field in hydrogen-implanted silicon", G.F.Cerofolini, L.Meda, G.Ottaviani, J.DeFayette, R.Dierckx, D.Donelli, M.Orlandini, M.Anderle, R.Canteri, C.Claeys, J.Vanhellemont and C.Volpones, Phys. Rev. B41, 12607 (1990).

     

    1. "SIMS depth profiling of implanted silicide/silicon layers", R. Canteri, R.Angelucci and M.Anderle, Secondary Ion Mass Spectrometry (SIMS VII), Eds. A.Benninghoven, C.A.Evans, K.D.McKeegan, H.A.Storms, and H.W.Werner, J.Wiley & Sons (Chichester 1990) p.635.

     

    1. "Correlation between microstructural and SIMS analyses of cast irons inoculated with CG alloy", A.Tiziani, A.Molinari, R.Canteri and M.Anderle, Journal of Materials Science 25, 1018 (1990).

     

    1. "Structural investigation of Al2O3 formed by ion implantation at various doses", P.S.Pawar, D.C.Kothari, A.M.Narsale, P.M.Raole, S.V.Gogawale, L.Guzman, S.Girardi, M.Dapor, M.Anderle and R.Canteri, Nucl. Instrum. and Meth. in Physics Research B39, 67 (1989).